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| LESHAN RADIO COMPANY, LTD. VHF Mixer Transistors NPN Silicon 3 COLLECTOR MMBTH24LT1 3 1 BASE 1 2 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol V V V CEO CBO EBO CASE 318-08, STYLE 6 SOT-23 (TO-236AB) Value 30 40 4.0 50 Unit Vdc Vdc Vdc mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBTH24LT1 = M3A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector-Base Breakdown Voltage (I C = 100 Adc , I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc , I C = 0) Collector Cutoff Current ( V CB = 15Vdc , I E = 0 ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO 30 40 4.0 -- -- -- -- -- -- -- 50 Vdc Vdc Vdc nAdc -- M34-1/2 LESHAN RADIO COMPANY, LTD. MMBTH24LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 8.0 mAdc, V CE = 10 Vdc) hFE 30 -- -- -- SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (V CE = 10 Vdc, I C = 8.0mAdc, f = 100MHz) Collector -Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Conversion Gain (213MHz to 45MHz) (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms) (60MHz to 45MHz) (V CC= 20 Vdc, I C= 8.0mAdc, Oscillator Injection = 150 mVrms) 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. fT C cb 400 -- -- 19 620 0.25 -- 24 20 -- 0.45 -- -- -- MHz pF dB -- CG 24 M34-2/2 |
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